to-220 parameter symbol value unit collector-base voltage v c b o 70 v collector-emitter voltage v c e o 60 v emitter-base voltage v e b o 5 v collector current i c 10 a base current i b 6 a total dissipation at p t o t 75 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c mje3055t / MJE2955T description parameter symbol test conditions min. typ. max. unit collector cut-off current i c e o v c b =60v, i e =0 0.3 ma emitter cut-off current i e b o v e b =5v, i c =0 5.0 ma collector-emitter sustaining voltage v c e o i c =100ma, i b =0 60 v dc current gain h f e ( 1 ) v c e =4v, i c =4.0a 20 100 h f e ( 2 ) v c e =4v, i c =10.0a 5 collector-emitter saturation voltage v c e ( s a t ) i c =4.0a,i b =400ma 1.1 v i c =10.0a,i b =3.3a 8.0 base-emitter saturation voltage v b e ( s a t ) v c e =4v,i c =4.0a 1.8 v current gain bandwidth product f t v c e =10v,i c =500ma 2 mhz complementary silicon power ttransistors product specification it is intented for use in power amplifier and switching applications. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o e tiger electronic co.,ltd
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